5秒后页面跳转
SI9912DY-T1-E3 PDF预览

SI9912DY-T1-E3

更新时间: 2024-09-09 22:11:39
品牌 Logo 应用领域
威世 - VISHAY 驱动器MOSFET驱动器驱动程序和接口开关接口集成电路光电二极管PC
页数 文件大小 规格书
8页 95K
描述
Half-Bridge MOSFET Driver for Switching Power Supplies

SI9912DY-T1-E3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.7Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:634515
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (8-Pin)Samacsys Footprint Name:SOIC (NARROW): 8-LEAD
Samacsys Released Date:2017-02-09 14:43:52Is Samacsys:N
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
标称输出峰值电流:1 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
电源电压1-最大:30 V电源电压1-分钟:4.5 V
表面贴装:YES技术:MOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mmBase Number Matches:1

SI9912DY-T1-E3 数据手册

 浏览型号SI9912DY-T1-E3的Datasheet PDF文件第2页浏览型号SI9912DY-T1-E3的Datasheet PDF文件第3页浏览型号SI9912DY-T1-E3的Datasheet PDF文件第4页浏览型号SI9912DY-T1-E3的Datasheet PDF文件第5页浏览型号SI9912DY-T1-E3的Datasheet PDF文件第6页浏览型号SI9912DY-T1-E3的Datasheet PDF文件第7页 
Si9912  
Vishay Siliconix  
Half-Bridge MOSFET Driver for Switching Power Supplies  
FEATURES  
APPLICATIONS  
D 4.5- to 5.5-V Operation  
D Multiphase Desktop CPU Supplies  
D Undervoltage Lockout  
D Single-Supply Synchronous Buck Converters  
D Mobile Computing CPU Core Power Converters  
D Standard-Synchronous Converters  
D 250-kHz to 1-MHz Switching Frequency  
D Shutdown Quiescent Current <5 mA  
D One Input PWM Signal Generates Both Drive  
D Bootstrapped High-Side Drive  
D Operates from 4.5- to 30-V Supply  
D TTL/CMOS Compatible Input Levels  
D 1-A Peak Drive Current  
D High Frequency Switching Converters  
D Break-Before-Make Circuit  
DESCRIPTION  
The Si9912 is a dual MOSFET high-speed driver with  
break-before-make. It is designed to operate in high frequency  
dc-dc switchmode power supplies. The high-side driver is  
bootstrapped to handle the high voltage slew rate associated  
with “floating” high-side gate drivers. Each driver is capable of  
switching a 3000-pF load with 60-ns propogation delay and  
25-ns transition time. The Si9912 comes with an internal  
break-before-make feature to prevent shoot-through current in  
the external MOSFETs. A shutdown pin is used to enable the  
driver. When disabled, the quiescent current of the driver is  
less than 5 mA.  
The Si9912 is available in both standard and lead (Pb)-free, 8-pin  
SOIC packages for operation over the industrial operation range  
(40_C to 85_C).  
FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE  
BOOT  
V
DD  
D1  
V
DC  
Q
1
C
TRUTH TABLE  
BOOT  
OUT  
H
Level Shift  
VS SD IN VOUTL VOUTH  
L
L
L
H
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
H
OUTPUT  
Undervoltage  
V
S
L
L
L
H
H
L
V
DD  
SD  
IN  
L
H
L
H
H
H
H
OUT  
GND  
L
Q
2
L
H
L
H
H
H
+
V
BBM  
Document Number: 71311  
S-40134—Rev. B, 16-Feb-04  
www.vishay.com  
1
 

SI9912DY-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI9912DY VISHAY

类似代替

Half-Bridge MOSFET Driver for Switching Power Supplies
SI9912DY-T1 VISHAY

类似代替

Half-Bridge MOSFET Driver for Switching Power Supplies

与SI9912DY-T1-E3相关器件

型号 品牌 获取价格 描述 数据表
SI9913 VISHAY

获取价格

Dual MOSFET Bootstrapped Driver with Break-Before-Make
SI9913_04 VISHAY

获取价格

Half-Bridge MOSFET Driver for Switching Power Supplies
SI9913DB VISHAY

获取价格

Half-Bridge MOSFET Driver for Switching Power Supplies
SI9913DY VISHAY

获取价格

Half-Bridge MOSFET Driver for Switching Power Supplies
SI9913DY-E3 VISHAY

获取价格

MOSFET Driver, PDSO8
SI9913DY-T1 VISHAY

获取价格

Half-Bridge MOSFET Driver for Switching Power Supplies
SI9913DY-T1-E3 VISHAY

获取价格

Half-Bridge MOSFET Driver for Switching Power Supplies
SI9922DY TEMIC

获取价格

Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o
SI9922DY VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SI9922DY-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET