Datasheet > SI7958DP

SI7958DP

更新时间： 2024-11-05 22:33:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	78K
描述
Dual N-Channel 40-V (D-S) MOSFET

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SI7958DP 数据手册

Si7958DP

Vishay Siliconix

New Product

Dual N-Channel 40-V (D-S) MOSFET

FEATURES

ꢀ TrenchFETꢁ Power MOSFET

ꢀ New Low Thermal Resistance PowerPAK

ꢁ

Package

PRODUCT SUMMARY

ꢀ

V_DS(V)

r_DS(on)

(

ꢀ

)

I_D(A)

APPLICATIONS

0.0165 @ V = 10 V

11.3

10.3

ꢀ Automotive*

− 12-V Boardnet

− Motor Drives

0.020 @ V = 4.5 V

− High-Side Switch

*Contact factory for automotive qualification

PowerPAK SO-8

5.15 mm

6.15 mm

Bottom View

Ordering Information: Si7958DP-T1—E3 (Lead Free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25ꢂC UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25ꢂC

= 70ꢂC

11.3

9.0

7.2

5.8

Continuous Drain Current (T = 150ꢂC)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

2.9

1.2

L = 0.1 mH

Single Avalanche Energy

= 25ꢂC

= 70ꢂC

3.5

2.2

1.4

0.9

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

ꢂ

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

ꢂ

Maximum Junction-to-Case (Drain)

2.2

2.7

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72661

S-32677—Rev. A, 29-Dec-03

www.vishay.com

12 3 4 5

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