Datasheet > SI7991DP

SI7991DP

更新时间： 2024-11-28 21:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	72K
描述
Dual P-Channel 30-V (D-S) MOSFET

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SI7991DP 数据手册

Si7991DP

Vishay Siliconix

New Product

Dual P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr Package

with Low 1.07-mm Profile

V_DS(V)

r_DS(on)(W)

I_D(A)

0.023 @ V = −10 V

−10.2

−8.1

APPLICATIONS

−30

0.035 @ V = −4.5

D Load Switch

− Notebook PCs

− Desktop PCs

− Game Stations

D Battery Switch

PowerPAK SO-8

5.15 mm

6.15 mm

Ordering Information: Si7991DP-T1

P-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−30

"20

= 25_C

= 70_C

−6.6

−5.3

−10.2

−8.2

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−30

continuous Source Current (Diode Conduction)

−2.9

3.5

−1.2

1.4

= 25_C

= 70_C

Maximum Power Dissipation

2.2

0.9

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

3.7

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72515

S-32127—Rev. B, 27-Oct-03

www.vishay.com

12 3 4 5

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