Datasheet > SI7971DP

SI7971DP

更新时间： 2024-11-09 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	50K
描述
Dual P-Channel 12-V (D-S) MOSFET

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SI7971DP 数据手册

Si7971DP

Vishay Siliconix

New Product

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D New Low Thermal Resistance PowerPAKr Package

with Low 1.07-mm Profile

0.018 @ V = -4.5 V

-11.7

-10.6

-3.5

APPLICATIONS

-12

0.022 @ V = -2.5

D Load Switch

0.029 @ V = -1.8

PowerPAK SO-8

5.15 mm

6.15 mm

Ordering Information: Si7971DP-T1

P-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-12

= 25_C

= 70_C

-7.5

-6.0

-11.7

-9.4

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

-30

continuous Source Current (Diode Conduction)

-2.9

3.5

-1.2

1.4

= 25_C

= 70_C

Maximum Power Dissipation

2.2

0.9

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

3.7

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72357

S-31610—Rev. A, 11-Aug-03

www.vishay.com

12 3 4 5

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