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SI7981DP-T1-E3 PDF预览

SI7981DP-T1-E3

更新时间: 2024-11-09 20:08:35
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
6页 52K
描述
TRANSISTOR 7 A, 20 V, 0.02 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPACK, SOP-8, FET General Purpose Power

SI7981DP-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-XDSO-C6针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:0.02 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XDSO-C6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.5 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7981DP-T1-E3 数据手册

 浏览型号SI7981DP-T1-E3的Datasheet PDF文件第2页浏览型号SI7981DP-T1-E3的Datasheet PDF文件第3页浏览型号SI7981DP-T1-E3的Datasheet PDF文件第4页浏览型号SI7981DP-T1-E3的Datasheet PDF文件第5页浏览型号SI7981DP-T1-E3的Datasheet PDF文件第6页 
Si7981DP  
Vishay Siliconix  
New Product  
Dual P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKr Package  
with Low 1.07-mm Profile  
0.020 @ V = -4.5 V  
-10.9  
-10.0  
-3.0  
GS  
APPLICATIONS  
-20  
0.024 @ V = -2.5  
V
V
GS  
D Load Switch  
0.033 @ V = -1.8  
GS  
PowerPAK SO-8  
S
1
S
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
G
G
2
1
3
G2  
4
D1  
8
D1  
7
D2  
6
D
1
D
2
D2  
Ordering Information: Si7981DP-T1  
5
P-Channel MOSFET  
P-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
-20  
DS  
V
"8  
GS  
T
= 25_C  
= 70_C  
-7.0  
-5.6  
-10.9  
-8.7  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
-30  
DM  
a
continuous Source Current (Diode Conduction)  
I
-2.9  
3.5  
-1.2  
1.4  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
2.2  
0.9  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
28  
60  
3
35  
85  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
3.7  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72354  
S-31611—Rev. A, 11-Aug-03  
www.vishay.com  
1

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