Datasheet > Si7972DP

Si7972DP

更新时间： 2024-09-17 14:53:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	224K
描述
Dual N-Channel 60 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

Si7972DP 数据手册

Si7972DP

Vishay Siliconix

www.vishay.com

Dual N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PowerPAK^®SO-8 Dual

D₁

• PWM optimized

D₂

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

G₁

S₁

APPLICATIONS

S₂

• System power DC/DC

G₂

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. (Ω) at V_GS= 10 V

0.018

0.021

7.1

8 ^a

Dual

_DS(on)max. (Ω) at V_GS= 4.5 V

Q_gtyp. (nC)

_D(A)

Configuration

N-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8

Si7972DP-T1-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

8 ^a

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed drain current

I_DM

I_S

_C= 25 °C

3 ^{b, c}

Source-drain current diode current

T_A= 25 °C

_C= 25 °C

_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.6 ^{b, c}

2.3 ^{b, c}

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

SYMBOL

R_thJA

TYP.

MAX.

UNIT

t ≤ 10 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

5.5

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 80 °C/W

S21-0760-Rev. C, 12-Jul-2021

Document Number: 75360

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与Si7972DP相关器件

型号	品牌	获取价格	描述	数据表
SI7973DP-T1	VISHAY	获取价格	TRANSISTOR 8.2 A, 12 V, 0.015 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8
SI7980DP	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI7980DP-T1-E3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI7980DP-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI7981DP-T1	VISHAY	获取价格	TRANSISTOR 7 A, 20 V, 0.02 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPACK, SOP-8,
SI7981DP-T1-E3	VISHAY	获取价格	TRANSISTOR 7 A, 20 V, 0.02 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPACK, SOP-8,
SI7983DP	VISHAY	获取价格	Dual P-Channel 20-V (D-S) MOSFET
SI7983DP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
SI7991DP	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SI7991DP-T1	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET

与Si7972DP相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

9
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

8
SL74HC10N：高性能三输入与非门解析
2024-09-03

90
AIC1781A 电池充电控制器深度解析
2024-09-03

80

产品中心

服务支持

精选活动

关于我们

帮助中心

Si7972DP

Si7972DP 数据手册

与Si7972DP相关器件

与Si7972DP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

Si7972DP

Si7972DP 数据手册

与Si7972DP相关器件

与Si7972DP相关文章

您还可以找

您在本页遇到什么问题？