Datasheet > SI7960DP

SI7960DP

更新时间： 2024-11-28 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	520K
描述
Dual N-Channel 60-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7960DP 数据手册

Si7960DP

Vishay Siliconix

Dual N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

9.7

Available

TrenchFET^®Power MOSFET

New Low Thermal Resistance PowerPAK^®

Package

0.021 at V_GS= 10 V

0.025 at V_GS= 4.5 V

•

8.9

•

Dual MOSFET for Space Savings

PowerPAK SO-8

5.15 mm

6.15 mm

Bottom View

Ordering Information: Si7960DP-T1-E3 (Lead (Pb)-free)

Si7960DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

T_A= 25 °C

T_A= 70 °C

9.7

7.8

6.2

5.0

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

Single Avalanche Current

2.9

1.2

I_AS

E_AS

L = 0.1 mH

T_A= 25 °C

Single Avalanche Energy

3.5

2.2

1.4

0.9

Maximum Power Dissipation^a

P_D

T_A= 70 °C

T_J, T_stg

- 55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{b, c}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient^a

°C/W

Maximum Junction-to-Case (Drain)

R_thJC

2.2

2.7

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 73075

S09-0223-Rev. B, 09-Feb-09

www.vishay.com

12 3 4 5 6 7...12

中文翻译

下载PDF

与SI7960DP相关器件

型号	品牌	获取价格	描述	数据表
SI7960DP-T1-E3	VISHAY	获取价格	Dual N-Channel 60-V (D-S) MOSFET
SI7960DP-T1-GE3	VISHAY	获取价格	Dual N-Channel 60-V (D-S) MOSFET
SI7962DP	VISHAY	获取价格	Dual N-Channel 40-V (D-S) MOSFET
SI7962DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 40V 7.1A 8-Pin PowerPAK SO T/R
SI7962DP-T1-GE3	VISHAY	获取价格	TRANSISTOR 7100 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND
SI7964DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 60V 6.1A 8-Pin PowerPAK SO T/R
SI7964DP-T1-GE3	VISHAY	获取价格	DUAL N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel
SI7970DP	VISHAY	获取价格	Dual N-Channel 40-V (D-S) MOSFET
SI7970DP-T1-E3	VISHAY	获取价格	Dual N-Channel 40-V (D-S) MOSFET
SI7971DP	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET