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SI7962DP PDF预览

SI7962DP

更新时间: 2024-11-28 06:11:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 93K
描述
Dual N-Channel 40-V (D-S) MOSFET

SI7962DP 数据手册

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Si7962DP  
Vishay Siliconix  
Dual N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
T
r
e
n
c
h
F
E
T
P
o
w
e
r
M
O
S
F
E
T
VDS (V)  
rDS(on)  
(
)
ID (A)  
Qg(Typ)  
New Low Thermal Resistance PowerPAK  
Dual MOSFET for Space Savings  
100% Rg Tested  
Package  
40  
0.017 @ V = 10 V  
GS  
11.1  
46.2  
H
i
g
h
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
A
t
H
i
g
h
T
e
m
p
e
r
a
t
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e
PowerPAK SO-8  
D
1
D
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
3
G2  
4
G
1
G
2
D1  
8
D1  
7
D2  
6
D2  
S
S
2
1
5
N-Channel MOSFET  
N-Channel MOSFET  
Bottom View  
Ordering Information: Si7962DP-T1—E3  
ABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
40  
DS  
GS  
V
V
"20  
T
= 25C  
= 70C  
11.1  
8.9  
7.1  
5.7  
A
a
Continuous Drain Current (T = 150C)  
I
D
J
T
A
Pulsed Drain Current  
I
40  
A
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
2.9  
1.2  
Single Avalanche Current  
L = 0.1 mH  
I
30  
45  
AS  
Single Avalanche Energy  
E
mJ  
AS  
T
= 25C  
= 70C  
3.5  
2.2  
1.4  
0.9  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
C
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
60  
35  
85  
a
Maximum Junction-to-Ambient  
R
R
thJA  
C
/
W
Maximum Junction-to-Case (Drain)  
2.2  
2.7  
thJC  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72914  
S-42058—Rev. B, 15-Nov-04  
www.vishay.com  
1

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