Datasheet > SI7962DP

SI7962DP

更新时间： 2024-11-09 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	93K
描述
Dual N-Channel 40-V (D-S) MOSFET

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中文翻译

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SI7962DP 数据手册

Si7962DP

Vishay Siliconix

Dual N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

ꢀ

ꢁ

V_DS(V)

r_DS(on)

(

ꢀ

)

I_D(A)

Q_g(Typ)

ꢀ New Low Thermal Resistance PowerPAK

ꢀ Dual MOSFET for Space Savings

ꢀ 100% R_gTested

ꢁ

Package

0.017 @ V = 10 V

11.1

46.2

ꢀ

PowerPAK SO-8

5.15 mm

6.15 mm

N-Channel MOSFET

Bottom View

Ordering Information: Si7962DP-T1—E3

ABSOLUTE MAXIMUM RATINGS (T = 25ꢂ C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25ꢂC

= 70ꢂC

11.1

8.9

7.1

5.7

Continuous Drain Current (T = 150ꢂC)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

2.9

1.2

Single Avalanche Current

L = 0.1 mH

Single Avalanche Energy

= 25ꢂC

= 70ꢂC

3.5

2.2

1.4

0.9

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

ꢂ

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

ꢂ

Maximum Junction-to-Case (Drain)

2.2

2.7

thJC

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72914

S-42058—Rev. B, 15-Nov-04

www.vishay.com

12 3 4 5 6

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