Si7949DP
Vishay Siliconix
Dual P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 5
Qg (Typ.)
Available
TrenchFET® Power MOSFET
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
0.064 at VGS = - 10 V
0.080 at VGS = - 4.5 V
•
•
- 60
26
- 4.5
PowerPAK SO-8
S1
S
1
S
2
5.15 mm
6.15 mm
1
G1
2
S2
3
G2
4
G
G
2
1
D1
8
D1
7
D2
6
D2
5
Bottom View
Ordering Information: Si7949DP-T1-E3 (Lead (Pb)-free)
Si7949DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
D
2
1
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 60
20
V
VGS
TA = 25 °C
A = 70 °C
- 5
- 4
- 3.2
- 2.6
- 25
- 1.2
22
Continuous Drain Current (TJ = 150 °C)a
ID
T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
IDM
IS
IAS
EAS
A
- 2.9
L = 0.1 mH
Single Pulse Avalanche Energy
24.2
1.5
mJ
W
TA = 25 °C
TA = 70 °C
3.5
2.2
Maximum Power Dissipationa
PD
0.94
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
27
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
36
85
Maximum Junction-to-Ambienta
RthJA
60
°C/W
RthJC
Maximum Junction-to-Case (Drain)
3.3
4.3
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73130
S09-0223-Rev. B, 09-Feb-09
www.vishay.com
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