Datasheet > Si7946ADP

Si7946ADP

更新时间： 2024-09-17 14:55:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	373K
描述
Dual N-Channel 150 V (D-S) MOSFET

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Si7946ADP 数据手册

Si7946ADP

Vishay Siliconix

www.vishay.com

Dual N-Channel 150 V (D-S) MOSFET

FEATURES

• ThunderFET^®technology optimizes balance

of R_DS(on), Q_g, Q_swand Q_oss

PowerPAK^®SO-8 Dual

D₁

D₂

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

S₁

G₁

G₂

S₂

APPLICATIONS

Top View

Bottom View

• DC/DC converters / boost

converters

PRODUCT SUMMARY

• Primary side switch

• Synchronous rectification

• Power management

• LED backlighting

V_DS(V)

150

0.186

0.193

0.256

4.3

R_DS(on)max. () at V_GS= 10 V

R_DS(on)max. () at V_GS= 7.5 V

R_DS(on)max. () at V_GS= 6 V

Q_gtyp. (nC)

I_D(A) ^a

Configuration

7.7

Dual

N-Channel

MOSFET

N-Channel

MOSFET

• Power-over-Ethernet

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

Si7946ADP-T1-GE3



ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

150

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

7.7

6.2

3.3 ^{b, c}

2.6 ^{b, c}

8 ^g

2.9 ^{b, c}

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

2.5

19.8

12.7

3.5 ^{b, c}

2.3 ^{b, c}

T_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

6.3

°C/W

4.8

Notes

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 80 °C/W

g. Package limited

S14-1339-Rev. A, 30-Jun-14

Document Number: 62958

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与Si7946ADP相关器件

型号	品牌	获取价格	描述	数据表
SI7946ADP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor
SI7946DP	VISHAY	获取价格	Dual N-Channel 150-V (D-S) MOSFET
SI7946DP_06	VISHAY	获取价格	Dual N-Channel 150-V (D-S) MOSFET
SI7946DP-T1	VISHAY	获取价格	Dual N-Channel 150-V (D-S) MOSFET
SI7946DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 150V 2.1A 8-Pin PowerPAK SO T/R
SI7946DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 150V 2.1A 8-Pin PowerPAK SO T/R
SI7948DP	VISHAY	获取价格	Dual N-Channel 60-V (D-S) MOSFET
SI7948DP-T1	VISHAY	获取价格	Dual N-Channel 60-V (D-S) MOSFET
SI7948DP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Si7949DP	VISHAY	获取价格	Dual P-Channel 60-V (D-S) MOSFET

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