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SI7946ADP-T1-GE3

更新时间： 2024-11-28 21:17:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 384K
描述
Power Field-Effect Transistor

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SI7946ADP-T1-GE3 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：12 weeks风险等级：5.7
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SI7946ADP-T1-GE3 数据手册

 浏览型号SI7946ADP-T1-GE3的Datasheet PDF文件第2页浏览型号SI7946ADP-T1-GE3的Datasheet PDF文件第3页浏览型号SI7946ADP-T1-GE3的Datasheet PDF文件第4页浏览型号SI7946ADP-T1-GE3的Datasheet PDF文件第5页浏览型号SI7946ADP-T1-GE3的Datasheet PDF文件第6页浏览型号SI7946ADP-T1-GE3的Datasheet PDF文件第7页 
Si7946ADP  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 150 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
• ThunderFET® technology optimizes balance  
of RDS(on), Qg, Qsw and Qoss  
VDS (V)  
RDS(on) (Ω) MAX.  
0.186 at VGS = 10 V  
0.193 at VGS = 7.5 V  
0.256 at VGS = 6 V  
ID (A) a  
7.7  
Qg (TYP.)  
• 100 % Rg and UIS tested  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
150  
7.6  
4.3 nC  
4
PowerPAK® SO-8 Dual  
D1  
APPLICATIONS  
• DC/DC converters / boost  
converters  
D1  
7
8
D
1
D
2
D2  
6
D2  
5
• Primary side switch  
• Synchronous rectification  
• Power management  
• LED backlighting  
G
G
2
1
1
S1  
2
G1  
3
S2  
1
4
• Power-over-Ethernet  
G2  
Bottom View  
Top View  
S
1
S
2
Ordering Information:  
Si7946ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel  
MOSFET  
N-Channel  
MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
150  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
A
VGS  
20  
T
C = 25 °C  
C = 70 °C  
7.7  
T
6.2  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
3.3 b, c  
2.6 b, c  
10  
8 g  
2.9 b, c  
Pulsed Drain Current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
IAS  
7
L = 0.1 mH  
EAS  
2.5  
mJ  
W
T
C = 25 °C  
C = 70 °C  
19.8  
12.7  
3.5 b, c  
2.3 b, c  
T
Maximum Power Dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature) d, e  
TJ, Tstg  
-55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum Junction-to-Ambient b, f  
SYMBOL  
RthJA  
TYPICAL  
25  
MAXIMUM  
UNIT  
t ≤ 10 s  
35  
°C/W  
Maximum Junction-to-Case (Drain)  
Steady State  
RthJC  
4.8  
6.3  
Notes  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 80 °C/W.  
g. Package limited.  
S14-1339-Rev. A, 30-Jun-14  
Document Number: 62958  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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