Datasheet > SI7946DP

SI7946DP

更新时间： 2024-11-27 22:33:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	73K
描述
Dual N-Channel 150-V (D-S) MOSFET

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SI7946DP 数据手册

Si7946DP

Vishay Siliconix

New Product

Dual N-Channel 150-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

ꢀ

ꢁ

ꢀ New Low Thermal Resistance PowerPAK

ꢀ Dual MOSFET for Space Savings

ꢀ PWM Optimized for Fast Switching

ꢀ Avalanche Rated

ꢁ

Package

V_DS(V)

r_DS(on)(W)

I_D(A)

0.150 @ V = 10 V

3.3

3.1

150

0.168 @ V = 6 V

APPLICATIONS

ꢀ

PowerPAK SO-8

5.15 mm

6.15 mm

Bottom View

Ordering Information: Si7946DP-T1

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25ꢂ C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

150

"20

= 25ꢂC

= 70ꢂC

3.3

2.6

2.1

1.7

Continuous Drain Current (T = 150ꢂC)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

2.9

1.2

L = 0.1 mH

Single Avalanche Energy

= 25ꢂC

= 70ꢂC

3.5

2.2

1.4

0.9

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

ꢂ

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

ꢂ

Maximum Junction-to-Case (Drain)

3.2

4.2

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72282

S-31361—Rev. A, 30-Jun-03

www.vishay.com

12 3 4 5

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