SI7943DP

更新时间： 2024-11-27 21:55:15

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
3页	174K
描述
Dual P-Channel 30-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SI7943DP 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	零件包装代码：	SOT
包装说明：	,	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.06
最大漏极电流 (Abs) (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	3.5 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI7943DP 数据手册

SPICE Device Model Si7943DP

Vishay Siliconix

Dual P-Channel 30-V (D-S) MOSFET

CHARACTERISTICS

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the p-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0 to 10V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 70699

31-May-04

www.vishay.com

12 3

中文翻译

下载PDF

与SI7943DP相关器件

型号	品牌	获取价格	描述	数据表
SI7943DP-E3	VISHAY	获取价格	TRANSISTOR 6 A, 30 V, 0.025 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8,
SI7944DP-T1	VISHAY	获取价格	TRANSISTOR 9.8 A, 30 V, 0.0095 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWERPACK, SO
SI7945DP	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SI7945DP_06	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SI7945DP-T1	VISHAY	获取价格	Transistor
SI7945DP-T1-E3	VISHAY	获取价格	Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK SO T/R
SI7945DP-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK SO T/R
Si7946ADP	VISHAY	获取价格	Dual N-Channel 150 V (D-S) MOSFET
SI7946ADP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor
SI7946DP	VISHAY	获取价格	Dual N-Channel 150-V (D-S) MOSFET