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SI7941DP-T1 PDF预览

SI7941DP-T1

更新时间: 2024-09-16 19:59:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 91K
描述
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

SI7941DP-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.9最大漏极电流 (Abs) (ID):5.8 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.5 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SI7941DP-T1 数据手册

 浏览型号SI7941DP-T1的Datasheet PDF文件第2页浏览型号SI7941DP-T1的Datasheet PDF文件第3页浏览型号SI7941DP-T1的Datasheet PDF文件第4页浏览型号SI7941DP-T1的Datasheet PDF文件第5页 
Si7941DP  
Vishay Siliconix  
Dual P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKr  
Package with Low 1.07-mm Profile  
Pb-free  
Available  
0.027 @ V = 10 V  
9.0  
7.5  
GS  
30  
APPLICATIONS  
0.039 @ V = 4.5  
V
GS  
D 34 Cell Li-Ion Battery Switch  
D Bus Load Switch for Notebook/Desktop Computers  
PowerPAK SO-8  
S1  
5.15 mm  
6.15 mm  
1
S
1
S
2
G1  
2
S2  
3
G2  
4
D1  
G
G
2
1
8
D1  
7
D2  
6
D2  
5
D
1
D
2
Bottom View  
P-Channel MOSFET  
P-Channel MOSFET  
Ordering Information: Si7941DP-T1  
Si7941DP-T1—E3 (Lead (Pb)-Free)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
5.8  
4.7  
9.0  
7.2  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
30  
a
continuous Source Current (Diode Conduction)  
I
2.9  
3.5  
1.2  
1.4  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
2.2  
0.9  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
J
stg  
_C  
b, c  
Soldering Recommendations (Peak Temperature)  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
60  
35  
85  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Case (Drain)  
2.2  
2.7  
thJC  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure  
adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71630  
S-50243—Rev. B, 21-Feb-05  
www.vishay.com  
1

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