SI7894DP

更新时间： 2024-11-27 21:54:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	187K
描述
N-Channel 30-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SI7894DP 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	零件包装代码：	SOT
包装说明：	,	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.38
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	14 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	5.4 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI7894DP 数据手册

\\\

SPICE Device Model Si7894DP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

CHARACTERISTICS

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0 to 10V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 70706

30-May-04

www.vishay.com

12 3

中文翻译

下载PDF

与SI7894DP相关器件

型号	品牌	获取价格	描述	数据表
SI7898DP	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET
SI7898DP (KI7898DP)	KEXIN	获取价格	N-Channel MOSFET
SI7898DP_06	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET
SI7898DP-E3	VISHAY	获取价格	TRANSISTOR 3 A, 150 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Genera
SI7898DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
SI7898DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
SI78XX	SECOS	获取价格	3-Terminal Positive Voltage Regulator
SI7900	VISHAY	获取价格	Specification Comparison
SI7900AEDN	VISHAY	获取价格	Specification Comparison
SI7900AEDN_08	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET, Common Drain