Datasheet > SI7900AEDN_08

SI7900AEDN_08

更新时间： 2024-11-28 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	537K
描述
Dual N-Channel 20-V (D-S) MOSFET, Common Drain

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SI7900AEDN_08 数据手册

Si7900AEDN

Vishay Siliconix

Dual N-Channel 20-V (D-S) MOSFET, Common Drain

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

V_DS(V)

R_DS(on)(Ω)

I_D(A)

8.5

TrenchFET^®Power MOSFET: 1.8 V Rated

0.026 at V_GS= 4.5 V

0.030 at V_GS= 2.5 V

0.036 at V_GS= 1.8 V

New PowerPak^®Package

- Low Thermal Resistance, R_thJC

- Low 1.07 mm Profile

RoHS

COMPLIANT

•

3000 V ESD Protection

APPLICATIONS

•

Protection Switch for 1-2 Li-ion Batteries

PowerPAK 1212-8

3.30 mm

2.6 kΩ

Bottom View

Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free)

Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 85 °C

8.5

6.4

Continuous Drain Current (T_J= 150 °C)^a

I_D

4.3

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

2.9

3.1

1.6

1.4

1.5

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 85 °C

0.79

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Case

R_thJA

Steady State

°C/W

R_thJC

2.2

2.8

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72287

S-81544-Rev. C, 07-Jul-08

www.vishay.com

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