是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, S-XDSO-C6 | 针数: | 8 |
Reach Compliance Code: | compliant | 风险等级: | 5.71 |
最大漏极电流 (Abs) (ID): | 5.3 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-XDSO-C6 | 端子数量: | 6 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.8 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SI7904DN-T1-E3 | VISHAY |
类似代替 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI7904BDN-T1-E3 | VISHAY |
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Dual N-Channel 20-V (D-S) MOSFET | |
SI7904BDN-T1-GE3 | VISHAY |
类似代替 |
Dual N-Channel 20-V (D-S) MOSFET |
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