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SI7909DN-T1-GE3 PDF预览

SI7909DN-T1-GE3

更新时间: 2024-09-15 15:51:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 93K
描述
Transistor

SI7909DN-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.83最大漏极电流 (Abs) (ID):5.3 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.8 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SI7909DN-T1-GE3 数据手册

 浏览型号SI7909DN-T1-GE3的Datasheet PDF文件第2页浏览型号SI7909DN-T1-GE3的Datasheet PDF文件第3页浏览型号SI7909DN-T1-GE3的Datasheet PDF文件第4页浏览型号SI7909DN-T1-GE3的Datasheet PDF文件第5页浏览型号SI7909DN-T1-GE3的Datasheet PDF文件第6页 
Si7909DN  
Vishay Siliconix  
Dual P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 7.7  
- 6.8  
- 5.7  
TrenchFET® Power MOSFETS: 1.8 V Rated  
New Low Thermal Resistance PowerPAK®  
Package  
0.037 at VGS = - 4.5 V  
0.048 at VGS = - 2.5 V  
0.068 at VGS = - 1.8 V  
RoHS  
COMPLIANT  
- 12  
Advanced High Cell Density Process  
Ultra-Low RDS(on), and High PD Capability  
APPLICATIONS  
Load Switch  
PA Switch  
Battery Switch  
Bi-Directional Switch  
PowerPAK 1212-8  
S
1
S
2
S1  
3.30 mm  
3.30 mm  
1
G1  
2
S2  
3
G2  
4
D1  
G
8
G
1
2
D1  
7
D2  
6
D2  
5
Bottom View  
D
2
D
1
Ordering Information: Si7909DN-T1-E3 (Lead (Pb)-free)  
Si7909DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
- 12  
8
V
VGS  
TA = 25 °C  
- 7.7  
- 5.5  
- 5.3  
- 3.8  
Continuous Drain Current (TJ = 150 °C)a  
ID  
TA = 85 °C  
A
IDM  
IS  
- 20  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
- 2.3  
2.8  
- 1.1  
1.3  
T
A = 25 °C  
A = 85 °C  
Maximum Power Dissipationa  
PD  
W
T
1.5  
0.85  
Operating Junction and Storage Temperature Range  
Soldering Recommendationsb, c  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t 10 s  
35  
75  
4
44  
94  
5
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
°C/W  
Maximum Junction-to-Case  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
RthJC  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71996  
S-81544-Rev. D, 07-Jul-08  
www.vishay.com  
1

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