SI7922DN

更新时间： 2024-11-27 22:33:55

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
3页	196K
描述
Dual N-Channel 100-V (D-S) MOSFET

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中文翻译

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技术参数
数据手册
替代型号

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SI7922DN 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.89	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	1.8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2.6 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI7922DN 数据手册

SPICE Device Model Si7922DN

Vishay Siliconix

Dual N-Channel 100-V (D-S) MOSFET

CHARACTERISTICS

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0 to 10V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 70322

31-May-04

www.vishay.com

12 3

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SI7922DN 替代型号

型号	品牌	替代类型	描述	数据表
SI7922DN-T1-E3	VISHAY	类似代替	Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R

与SI7922DN相关器件

型号	品牌	获取价格	描述	数据表
SI7922DN_06	VISHAY	获取价格	Dual N-Channel 100-V (D-S) MOSFET
SI7922DN_07	VISHAY	获取价格	Dual N-Channel 100-V (D-S) MOSFET
SI7922DN-E3	VISHAY	获取价格	TRANSISTOR 1.8 A, 100 V, 0.195 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWER
SI7922DN-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R
SI7922DN-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R
SI7923DN	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SI7923DN_06	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SI7923DN-T1-E3	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SI7923DN-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R
SI7924	SECOS	获取价格	3-Terminal Negative Voltage Regulator