5秒后页面跳转
SI7923DN-T1-E3 PDF预览

SI7923DN-T1-E3

更新时间: 2024-11-27 21:53:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 70K
描述
Dual P-Channel 30-V (D-S) MOSFET

SI7923DN-T1-E3 数据手册

 浏览型号SI7923DN-T1-E3的Datasheet PDF文件第2页浏览型号SI7923DN-T1-E3的Datasheet PDF文件第3页浏览型号SI7923DN-T1-E3的Datasheet PDF文件第4页浏览型号SI7923DN-T1-E3的Datasheet PDF文件第5页 
Si7923DN  
Vishay Siliconix  
New Product  
Dual P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D New Low Thermal Resistance PowerPAKr  
Package  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.047 @ V = 10 V  
6.4  
5  
GS  
RoHS  
30  
COMPLIANT  
APPLICATIONS  
0.075 @ V = 4.5  
V
GS  
D Portable  
Battery Switch  
Load Switch  
S
S
PowerPAK 1212-8  
S1  
G
G
3.30 mm  
3.30 mm  
1
G1  
2
S2  
3
G2  
4
D1  
8
D1  
7
D
D
D2  
6
D2  
Ordering Information: Si7923DN-T1—E3 (Lead (Pb)-Free)  
P-Channel MOSFET  
P-Channel MOSFET  
5
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 85_C  
4.3  
3.1  
6.4  
4.6  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
20  
a
continuous Source Current (Diode Conduction)  
I
2.3  
2.8  
1.1  
1.3  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.5  
0.85  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
J
stg  
_C  
b,c  
Soldering Recommendations (Peak Temperature)  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
35  
75  
4
44  
94  
5
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Case (Drain)  
thJC  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure  
adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 72622  
S-51129—Rev. B, 13-Jun-05  
www.vishay.com  
1

与SI7923DN-T1-E3相关器件

型号 品牌 获取价格 描述 数据表
SI7923DN-T1-GE3 VISHAY

获取价格

Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R
SI7924 SECOS

获取价格

3-Terminal Negative Voltage Regulator
SI7924A SECOS

获取价格

3-Terminal Negative Voltage Regulator
SI7925DN-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SI7925DN-T1-GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SI7938DP VISHAY

获取价格

Dual N-Channel 40-V (D-S) MOSFET
SI7938DP-T1-GE3 VISHAY

获取价格

Dual N-Channel 40-V (D-S) MOSFET
SI7940DP VISHAY

获取价格

Dual N-Channel 12-V (D-S) MOSFET
SI7940DP-T1 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7940DP-T1-E3 VISHAY

获取价格

Trans MOSFET N-CH 12V 7.6A 8-Pin PowerPAK SO T/R