是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-XDSO-C6 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.92 | 外壳连接: | DRAIN |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 5.8 A | 最大漏极电流 (ID): | 5.8 A |
最大漏源导通电阻: | 0.027 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XDSO-C6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 3.5 W |
最大脉冲漏极电流 (IDM): | 30 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7941DP-E3 | VISHAY |
获取价格 |
TRANSISTOR 5.8 A, 30 V, 0.027 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8 | |
SI7941DP-T1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
SI7942DP | VISHAY |
获取价格 |
Dual N-Channel 100-V (D-S) MOSFET | |
SI7942DP_06 | VISHAY |
获取价格 |
Dual N-Channel 100-V (D-S) MOSFET | |
SI7942DP-T1 | VISHAY |
获取价格 |
Dual N-Channel 100-V (D-S) MOSFET | |
SI7942DP-T1-E3 | VISHAY |
获取价格 |
Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R | |
SI7943DP | VISHAY |
获取价格 |
Dual P-Channel 30-V (D-S) MOSFET | |
SI7943DP-E3 | VISHAY |
获取价格 |
TRANSISTOR 6 A, 30 V, 0.025 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, | |
SI7944DP-T1 | VISHAY |
获取价格 |
TRANSISTOR 9.8 A, 30 V, 0.0095 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWERPACK, SO | |
SI7945DP | VISHAY |
获取价格 |
Dual P-Channel 30-V (D-S) MOSFET |