Datasheet > SI7922DN_07

SI7922DN_07

更新时间： 2024-11-28 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	50K
描述
Dual N-Channel 100-V (D-S) MOSFET

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SI7922DN_07 数据手册

Si7922DN

Vishay Siliconix

New Product

Dual N-Channel 100-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D New Low Thermal Resistance PowerPAKt

Package, ¹/₃the Space of An SO-8 While

Thermally Comparable

0.195 @ V = 10 V

2.5

2.3

100

0.230 @ V = 6 V

D PWM Optimized

APPLICATIONS

D DC/DC Primary-Side Switch

D 48-V Battery Monitoring

PowerPAKt 1212-8

3.30 mm

N-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

100

"20

= 25_C

= 85_C

2.5

1.8

1.3

Continuous Drain Current (T = 150__C)

Pulsed Drain Current

Avalanche Current

0.1 mH

Single Avalanche Energy

1.25

Continuous Source Current (Diode Conduction)

2.2

2.6

1.4

1.1

1.3

= 25_C

= 85_C

Maximum Power Dissipation

0.69

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

4.3

5.4

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72031

S-21976—Rev. A, 04-Nov-02

www.vishay.com

12 3 4 5

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