Si7913DN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package
VDS (V)
rDS(on) (W)
ID (A)
0.037 @ V = −4.5 V
−7.4
−6.5
−5.5
GS
RoHS
COMPLIANT
APPLICATIONS
D Portable
−20
0.048 @ V = −2.5
V
V
GS
0.066 @ V = −1.8
GS
− PA Switch
− Battery Switch
− Load Switch
PowerPAK 1212-8
S
S
S1
3.30 mm
3.30 mm
1
G
G
G1
2
S2
3
G2
4
D1
8
D1
7
D
D
P-Channel MOSFET
D2
6
D2
5
Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free)
P-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−20
DS
V
V
GS
"8
T
= 25_C
= 85_C
−5.0
−3.6
−7.4
−5.3
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−20
a
continuous Source Current (Diode Conduction)
I
−2.3
2.8
−1.1
1.3
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.5
0.85
Operating Junction and Storage Temperature Range
T , T
−55 to 150
J
stg
_C
b,c
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
35
75
4
44
94
5
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Case
thJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
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