Datasheet > SI7911DN

SI7911DN

更新时间： 2024-11-27 22:33:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	50K
描述
Dual P-Channel 20-V (D-S) MOSFET

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SI7911DN 数据手册

Si7911DN

Vishay Siliconix

New Product

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS: 1.8-V Rated

D New Low Thermal Resistance PowerPAKr

V_DS(V)

r_DS(on)(W)

I_D(A)

Package

0.051 @ V = -4.5 V

-5.7

-5.0

-4.2

APPLICATIONS

-20

0.067 @ V = -2.5

D Portable

0.094 @ V = -1.8

PA Switch

Battery Switch

Load Switch

PowerPAK 1212-8

3.30 mm

Ordering Information: Si7911DN-T1

P-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-20

= 25_C

= 85_C

-4.2

-3.0

-5.7

-4.1

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

-20

continuous Source Current (Diode Conduction)

-2.1

2.5

-1.1

1.3

= 25_C

= 85_C

Maximum Power Dissipation

1.3

0.85

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case

5.6

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72340

S-31612—Rev. A, 11-Aug-03

www.vishay.com

12 3 4 5

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