Datasheet > SI7901EDN

SI7901EDN

更新时间： 2024-10-29 22:30:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	46K
描述
Dual P-Channel 20-V (D-S) MOSFET

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中文翻译

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技术参数
数据手册

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SI7901EDN 技术参数

是否无铅：	含铅	生命周期：	Transferred
包装说明：	,	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.06
Base Number Matches：	1

SI7901EDN 数据手册

Si7901EDN

Vishay Siliconix

New Product

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS: 1.8-V Rated

D ESD Protected: 4500 V

V_DS(V)

r_DS(on)(W)

I_D(A)

D Ultra-Low Thermal Resistance, PowerPAKt

Package with Low 1.07-mm Profile

0.048 @ V = –4.5 V

–6.3

–5.3

–4.6

–20

0.068 @ V = –2.5

APPLICATIONS

0.090 @ V = –1.8

D Bidirectional Switch

PowerPAKt 1212-8

3.30 mm

3 kW

P-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

"12

= 25_C

= 85_C

–4.3

–3.1

–6.3

–4.5

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–20

continuous Source Current (Diode Conduction)

–2.3

2.8

–1.1

1.3

= 25_C

= 85_C

Maximum Power Dissipation

1.5

0.7

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71430

S-03710—Rev. A, 14-May-01

www.vishay.com

12 3 4 5

中文翻译

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