Datasheet > SI7902EDN-T1

SI7902EDN-T1

更新时间： 2024-11-29 07:14:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	81K
描述
TRANSISTOR 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power

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SI7902EDN-T1 数据手册

Si7902EDN

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET, Common Drain

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

8.3

New Low Thermal Resistance PowerPAK^®

Package with Low 1.07-mm Profile

3000–V ESD Protection

Pb-free

Available

0.028 at V_GS= 4.5 V

0.030 at V_GS= 3.7 V

0.043 at V_GS= 2.5 V

•

RoHS*

8.0

COMPLIANT

APPLICATIONS

6.7

•

Protection Switch for 1–2–Li–ion/LiP Batteries

PowerPAK 1212-8

3.30 mm

1.8 kΩ

Bottom View

N-Channel

Ordering Information: Si7902EDN-T1

Si7902EDN–T1–E3 (Lead (Pb)–free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25 °C

T_A= 85 °C

8.3

6.0

5.6

4.0

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

2.7

3.2

1.7

1.3

1.5

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 85 °C

0.79

Operating Junction and Storage Temperature Range

Soldering Recommendations^b,c

T_J, T_stg

– 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 sec

Maximum Junction-to-Ambient^a

R_thJA

Steady State

°C/W

Maximum Junction-to-Case (Drain)

R_thJC

1.9

2.4

Notes

a. Surface Mounted on 1" x 1" FR4 Board.

b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is

not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 71801

S-51210–Rev. B, 27-Jun-05

www.vishay.com

12 3 4 5 6

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与SI7902EDN-T1相关器件

型号	品牌	获取价格	描述	数据表
SI7902EDN-T1-E3	VISHAY	获取价格	TRANSISTOR 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 1212-8, P
SI7904BDN	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI7904BDN-T1-E3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI7904BDN-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI7904DN	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SI7904DN	ADI	获取价格	Thermoelectric Cooler Controller
SI7904DN-E3	VISHAY	获取价格	TRANSISTOR 5.3 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPA
SI7904DN-T1-E3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI7904DN-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1
SI7905	SECOS	获取价格	3-Terminal Negative Voltage Regulator

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