SI7902EDN

更新时间： 2024-10-29 22:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	48K
描述
Dual N-Channel 30-V (D-S) MOSFET, Common Drain

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SI7902EDN 数据手册

Si7902EDN

Vishay Siliconix

Preliminary Information

Dual N-Channel 30-V (D-S) MOSFET, Common Drain

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKt

Package with Low 1.07-mm Profile

D 3000-V ESD Protection

V_DS(V)

r_DS(on)(W)

I_D(A)

0.028 @ V = 4.5 V

8.3

8.0

6.7

0.030 @ V = 3.7 V

APPLICATIONS

0.043 @ V = 2.5 V

D Protection Switch for 1-2 Li-ion/LiP Batteries

PowerPAKt 1212-8

3.30 mm

1.8 kW

N-Channel

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 85_C

8.3

6.0

5.6

4.0

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

2.7

3.2

1.7

1.3

1.5

= 25_C

= 85_C

Maximum Power Dissipation

0.79

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

1.9

2.4

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

This data sheet contains preliminary specifications that are subject to change.

Document Number: 71801

S-05696—Rev. A, 18-Feb-02

www.vishay.com

12 3 4 5

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