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SI7900AEDN-T1-E3 PDF预览

SI7900AEDN-T1-E3

更新时间: 2024-11-28 09:25:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
12页 537K
描述
Dual N-Channel 20-V (D-S) MOSFET, Common Drain

SI7900AEDN-T1-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, S-XDSO-C5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:0.9
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:5359589Samacsys Pin Count:8
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:PowerPAK? 1212-8 Single_2-3Samacsys Released Date:2019-11-21 16:31:36
Is Samacsys:N外壳连接:DRAIN
配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:0.026 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-XDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.1 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7900AEDN-T1-E3 数据手册

 浏览型号SI7900AEDN-T1-E3的Datasheet PDF文件第2页浏览型号SI7900AEDN-T1-E3的Datasheet PDF文件第3页浏览型号SI7900AEDN-T1-E3的Datasheet PDF文件第4页浏览型号SI7900AEDN-T1-E3的Datasheet PDF文件第5页浏览型号SI7900AEDN-T1-E3的Datasheet PDF文件第6页浏览型号SI7900AEDN-T1-E3的Datasheet PDF文件第7页 
Si7900AEDN  
Vishay Siliconix  
Dual N-Channel 20-V (D-S) MOSFET, Common Drain  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
8.5  
8
TrenchFET® Power MOSFET: 1.8 V Rated  
0.026 at VGS = 4.5 V  
0.030 at VGS = 2.5 V  
0.036 at VGS = 1.8 V  
New PowerPak® Package  
- Low Thermal Resistance, RthJC  
- Low 1.07 mm Profile  
RoHS  
20  
COMPLIANT  
7
3000 V ESD Protection  
APPLICATIONS  
Protection Switch for 1-2 Li-ion Batteries  
PowerPAK 1212-8  
D
1
D
2
S1  
3.30 mm  
3.30 mm  
1
G1  
2
S2  
3
2.6 kΩ  
2.6 kΩ  
G2  
4
G
G
2
1
D
8
D
7
D
6
D
5
Bottom View  
S
1
S
2
Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free)  
Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel  
N-Channel  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
20  
30  
V
VGS  
12  
TA = 25 °C  
TA = 85 °C  
8.5  
6.4  
6
Continuous Drain Current (TJ = 150 °C)a  
ID  
4.3  
A
IDM  
IS  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
2.9  
3.1  
1.6  
1.4  
1.5  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 85 °C  
0.79  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
32  
Maximum  
Unit  
t 10 s  
40  
82  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Case  
RthJA  
Steady State  
Steady State  
65  
°C/W  
RthJC  
2.2  
2.8  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 72287  
S-81544-Rev. C, 07-Jul-08  
www.vishay.com  
1

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