是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, S-XDSO-C5 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 0.9 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
Samacsys PartID: | 5359589 | Samacsys Pin Count: | 8 |
Samacsys Part Category: | MOSFET (N-Channel) | Samacsys Package Category: | Other |
Samacsys Footprint Name: | PowerPAK? 1212-8 Single_2-3 | Samacsys Released Date: | 2019-11-21 16:31:36 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 6 A | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 0.026 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-XDSO-C5 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3.1 W | 最大脉冲漏极电流 (IDM): | 30 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7900AEDN-T1-GE3 | VISHAY |
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Specification Comparison | |
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Power Field-Effect Transistor, 6A I(D), 20V, 0.026ohm, 2-Element, N-Channel, Silicon, Meta | |
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Transistor | |
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TRANSISTOR 5.6 A, 30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERP |