SI7900AEDN

更新时间： 2024-10-29 22:30:43

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威世 - VISHAY		/
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描述
Specification Comparison

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数据手册

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SI7900AEDN 数据手册

Specification Comparison

Vishay Siliconix

Si7900AEDN vs. Si7900EDN

Description: Dual N-Channel, 20-V (D-S) MOSFET with Common Drain

Package:

Pin Out:

PowerPAKr 1212

Identical

Part Number Replacements:

Si7900AEDN-T1 Replaces Si7900EDN-T1

Si7900AEDN-T1—E3 (Lead Free version) Replaces Si7900EDN-T1

Summary of Performance:

The Si7900AEDN is the replacement for the original Si7900EDN; both parts perform identically including limits to the

parametric tables below.

ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Si7900AEDN

Si7900EDN

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

8.5

"12

T = 25_C

Continuous Drain Current

Pulsed Drain Current

T = 85_C

6.4

Continuous Source Current (MOSFET Diode Conduction)

2.9

T = 25_C

2.9

3.2

Power Dissipation

T = 85_C

3.1

1.7

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

T and T

−55 to 150

stg

thJA

_C/W

SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)

Si7900AEDN

Si7900EDN

Typ

Min

Typ

Max

Min

Max

Parameter

Symbol

Unit

Static

Gate-Threshold Voltage

0.4

0.9

"10

0.4

G(th)

= 12 V

= 4.5 V

"10

Gate-Body Leakage

GSS

Zero Gate Voltage Drain Current

On-State Drain Current

DSS

= 4.5 V

= 2.5 V

= 1.8 V

D(on)

0.020

0.022

0.026

0.030

0.036

0.020

0.025

0.031

0.026

0.031

0.039

Drain-Source On-Resistance

Ds(on)

Forward Transconductance

Diode Forward Voltage

0.65

1.1

0.65

1.1

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

10.5

1.9

12.5

2.7

Qgs

Qgd

1.8

2.7

Switching

0.85

1.3

1.25

2.0

0.7

1.3

5.5

1.0

2.0

8.0

d(on)

Turn-On Time

8.6

d(off)

Turn-Off Time

4.29

6.5

www.vishay.com

Document Number: 72907

22-Mar-04

中文翻译

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