Datasheet > SI4886DY-T1-E3

SI4886DY-T1-E3

更新时间： 2024-09-18 12:27:59

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
8页	596K
描述
N-Channel Reduced Qg, Fast Switching MOSFET

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SI4886DY-T1-E3 数据手册

Si4886DY

Vishay Siliconix

N-Channel Reduced Q , Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)(Ω)

I_D(A)

0.010 at V_GS= 10 V

0.0135 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFETs

High-Efficiency PWM Optimized

Compliant to RoHS Directive 2002/95/EC

SO-8

Top View

Ordering Information: Si4886DY-T1-E3 (Lead (Pb)-free)

Si4886DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

9.5

7.6

Continuous Drain Current (T_J= 150 °C)^a

I_D

10.5

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

2.60

2.95

1.90

1.40

1.56

1.0

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient (MOSFET)^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71142

S09-0869-Rev. B, 18-May-09

www.vishay.com

12 3 4 5 6 7 8

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SI4886DY-T1-E3 替代型号

型号	品牌	替代类型	描述	数据表
SI4886DY	VISHAY	功能相似	N-Channel Reduced Qg, Fast Switching MOSFET

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