Datasheet > SI4890DY

SI4890DY

更新时间： 2024-09-17 22:38:35

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
4页	55K
描述
N-Channel Reduced Qg, Fast Switching MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI4890DY 数据手册

Si4890DY

Vishay Siliconix

N-Channel Reduced Q_g, Fast Switching MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.012 @ V = 10 V

"11

0.020 @ V = 4.5 V

D D

SO-8

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"25

"11

= 25_C

= 70_C

a, b

Continuous Drain Current (T = 150__C)

"50

Pulsed Drain Current (10 ms Pulse Width)

a, b

Continuous Source Current (Diode Conduction)

2.3

= 25_C

= 70_C

2.5

a, b

Maximum Power Dissipation

1.6

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Maximum Junction-to-Ambient (MOSFET)

thJA

_C/W

Steady State

Notes

a. Surface Mounted on FR4 Board.

b. t v 10 sec.

Document Number: 70855

S-56948—Rev. A, 01-Feb-99

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4

中文翻译

下载PDF

与SI4890DY相关器件

型号	品牌	获取价格	描述	数据表
SI4892DY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4892DY-T1-E3	VISHAY	获取价格	TRANSISTOR 8800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET
SI4892DY-T1-GE3	VISHAY	获取价格	TRANSISTOR 8800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI4894BDY	VISHAY	获取价格	N-Channel, 30-V (D-S) MOSFET
SI4894BDY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SI4894BDY-T1-E3	VISHAY	获取价格	TRANSISTOR 8900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET
SI4894BDY-T1-GE3	VISHAY	获取价格	TRANSISTOR 8900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI4894DY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4894DY	NSC	获取价格	N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages
SI4894DY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET