SI4892DY

更新时间： 2024-09-17 21:55:03

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	72K
描述
N-Channel 30-V (D-S) MOSFET

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中文翻译

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技术参数
数据手册

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SI4892DY 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	8.8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	3.1 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI4892DY 数据手册

Si4892DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D High Efficiency PWM Optimized

RoHS

COMPLIANT

D 100% R_gTested

0.012 @ V = 10 V

12.4

9.6

D 100% UIS Tested

0.020 @ V = 4.5 V

SO-8

N-Channel MOSFET

Top View

Ordering Information: Si4892DY-T1

Si4892DY-T1–E3 (Lead (Pb)–free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

12.4

9.9

8.8

7.0

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

"50

Continuous Source Current (Diode Conduction)

2.60

1.3

Avalanche Current

L = 0.1 mH

Single-Pulse Avalanche Energy

= 25_C

= 70_C

3.1

2.0

1.6

1.0

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RATINGSRESISTANCE

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient (MOSFET)

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71407

S-51455—Rev. F, 01-Aug-05

www.vishay.com

12 3 4

中文翻译

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