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SI4886DY

更新时间: 2024-11-07 21:55:03
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
4页 58K
描述
N-Channel Reduced Qg, Fast Switching MOSFET

SI4886DY 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.81配置:Single
最大漏极电流 (Abs) (ID):9.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.56 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SI4886DY 数据手册

 浏览型号SI4886DY的Datasheet PDF文件第2页浏览型号SI4886DY的Datasheet PDF文件第3页浏览型号SI4886DY的Datasheet PDF文件第4页 
Si4886DY  
Vishay Siliconix  
New Product  
N-Channel Reduced Qg, Fast Switching MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.010 @ V = 10 V  
13  
11  
GS  
30  
0.0135 @ V = 4.5 V  
GS  
D
D
D D  
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
N-Channel MOSFET  
Top View  
S
S
S
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
13  
9.5  
7.6  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
10.5  
A
Pulsed Drain Current  
I
"50  
DM  
a
Continuous Source Current (Diode Conduction)  
I
2.60  
2.95  
1.90  
1.40  
1.56  
1.0  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
35  
68  
18  
42  
80  
23  
a
Maximum Junction-to-Ambient (MOSFET)  
R
thJA  
thJF  
_
C/W  
Maximum Junction-to-Foot (Drain)  
R
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71142  
S-00206—Rev. A, 21-Feb-00  
www.vishay.com S FaxBack 408-970-5600  
2-1  

SI4886DY 替代型号

型号 品牌 替代类型 描述 数据表
SI4886DY-T1-E3 VISHAY

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