生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.75 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 11.5 A | 最大漏源导通电阻: | 0.01 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4884DYL86Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Meta | |
SI4884DY-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4886DY | VISHAY |
获取价格 |
N-Channel Reduced Qg, Fast Switching MOSFET | |
SI4886DY-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4886DY-T1-E3 | VISHAY |
获取价格 |
N-Channel Reduced Qg, Fast Switching MOSFET | |
SI4888DY | VISHAY |
获取价格 |
N-Channel Reduced Qg, Fast Switching MOSFET | |
SI4888DY-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMP | |
SI4890BDY | VISHAY |
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N-Channel 30-V (D-S) MOSFET | |
SI4890BDY-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 16 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET | |
SI4890DY | VISHAY |
获取价格 |
N-Channel Reduced Qg, Fast Switching MOSFET |