Datasheet > SI4884BDY-T1

SI4884BDY-T1

更新时间： 2024-09-18 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	123K
描述
N-Channel 30-V (D-S) MOSFET

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中文翻译

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数据手册

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SI4884BDY-T1 数据手册

Si4884BDY

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)^a

Q_g(Typ)

D PWM Optimized

RoHS

COMPLIANT

0.0090 @ V = 10 V

16.5

13.2

10.5 nC

0.012 @ V = 4.5 V

SO-8

Top View

N-Channel MOSFET

Ordering Information: Si4884BDY-T1—E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

16.5

13.2

= 25_C

= 70_C

= 25_C

= 70_C

Continuous Drain Current (T = 150_C)

b, c

12.4

b, c

10.0

Pulsed Drain Current

= 25_C

= 70_C

= 25_C

= 70_C

4.0

b, c

2.3

Continuous Source-Drain Diode Current

4.45

2.85

Maximum Power Dissipation

b, c

2.50

b, c

1.6

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

b, d

Maximum Junction-to-Ambient

t p 10 sec

thJA

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

thJF

Notes:

a. Based on T = 25_C.

b. Surface mounted on 1” x 1” FR4 board.

c. t = 10 sec

d. Maximum under steady state conditions is 85 _C/W.

Document Number: 73454

S–51450—Rev. A, 01-Aug-05

www.vishay.com

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