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SI3861BDV-T1-GE3 PDF预览

SI3861BDV-T1-GE3

更新时间： 2024-11-21 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
10页 205K
描述
Buffer/Inverter Based Peripheral Driver, 1 Driver, MOS, PDSO6, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6

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SI3861BDV-T1-GE3 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TSSOP
包装说明：TSOP-6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.14
Is Samacsys：N内置保护：TRANSIENT
驱动器位数：1接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
长度：3.05 mm湿度敏感等级：1
功能数量：1端子数量：6
输出电流流向：SOURCE AND SINK最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSOP6,.11,37封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：260
电源：4.5/20 V认证状态：Not Qualified
座面最大高度：1.1 mm子类别：Peripheral Drivers
最大供电电压：20 V最小供电电压：4.5 V
标称供电电压：5 V表面贴装：YES
技术：MOS端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.95 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
宽度：1.65 mmBase Number Matches：1

SI3861BDV-T1-GE3 数据手册

 浏览型号SI3861BDV-T1-GE3的Datasheet PDF文件第2页浏览型号SI3861BDV-T1-GE3的Datasheet PDF文件第3页浏览型号SI3861BDV-T1-GE3的Datasheet PDF文件第4页浏览型号SI3861BDV-T1-GE3的Datasheet PDF文件第5页浏览型号SI3861BDV-T1-GE3的Datasheet PDF文件第6页浏览型号SI3861BDV-T1-GE3的Datasheet PDF文件第7页 
Si3861BDV  
Vishay Siliconix  
Load Switch with Level-Shift  
FEATURES  
PRODUCT SUMMARY  
•
Halogen-free According to IEC 61249-2-21  
VDS2 (V)  
RDS(on) (Ω)  
ID (A)  
2.3  
Definition  
0.075 at VIN = 10 V  
0.120 at VIN = 5.0 V  
0.145 at VIN = 4.5 V  
•
•
•
•
•
•
•
•
•
4.5 V Rated  
4.5 to 20  
1.9  
ESD Protected: 3000 V  
105 mΩ Low RDS(on) TrenchFET®  
4.5 V to 20 V Input  
1.5 V to 8 V Logic Level Control  
Low Profile, Small Footprint TSOP-6 Package  
3000 V ESD Protection On Input Switch, VON/OFF  
Adjustable Slew-Rate  
1.7  
Compliant to RoHS Directive 2002/95/EC  
DESCRIPTION  
The Si3861BDV includes a P- and N-Channel MOSFET in a  
single TSOP-6 package. The low on-resistance P-Channel  
TrenchFET® is tailored for use as a load switch. The  
N-Channel, with an external resistor, can be used as a level-  
shift to drive the P-Channel load-switch. The N-Channel  
MOSFET has internal ESD protection and can be driven by  
logic signals as low as 1.5 V. The Si3861DV operates on  
supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A.  
APPLICATION CIRCUITS  
Si3861BDV  
10  
t
f
2, 3  
8
6
4
2
0
4
V
OUT  
V
IN  
t
d(off)  
Q2  
R1  
C1  
6
5
6
t
r
ON/OFF  
I
= 1 A  
ON/OFF  
LOAD  
C
L
V
o
= 3 V  
Q1  
C = 10 µF  
o
i
C
t
= 1 µF  
d(on)  
C
i
1
0
2
4
6
8
10  
12  
R2 (kΩ)  
R2  
Note: For R2 switching variations with other V /R1  
IN  
GND  
combinations See Typical Characteristics  
R2  
The Si3861BDV is ideally suited for high-side load switching  
in portable applications. The integrated N-Channel level-shift  
device saves space by reducing external components. The  
slew rate is set externally so that rise-times can be tailored to  
different load types.  
COMPONENTS  
R1  
Pull-Up Resistor  
Typical 10 kΩ to 1 mΩ*  
Typical 0 to 100 kΩ*  
Typical 1000 pF  
R2  
Optional Slew-Rate Control  
Optional Slew-Rate Control  
C1  
Note:  
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.  
Document Number: 73343  
S09-2110-Rev. B, 12-Oct-09  
www.vishay.com  
1
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SI3861BDV-T1-GE3 替代型号

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