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SI3861DV

更新时间： 2024-11-21 20:19:55
品牌 Logo 应用领域
威世 - VISHAY 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
6页 84K
描述
Peripheral Driver, 1 Driver, MOS, PDSO6,

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中文翻译

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SI3861DV 技术参数

生命周期：Obsolete包装说明：TSOP, TSOP6,.11,37
Reach Compliance Code：compliant风险等级：5.82
Is Samacsys：N驱动器位数：1
JESD-30 代码：R-PDSO-G6端子数量：6
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装代码：TSOP封装等效代码：TSOP6,.11,37
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
电源：4.5/20 V认证状态：Not Qualified
子类别：Peripheral Drivers表面贴装：YES
技术：MOS端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
Base Number Matches：1

SI3861DV 数据手册

 浏览型号SI3861DV的Datasheet PDF文件第2页浏览型号SI3861DV的Datasheet PDF文件第3页浏览型号SI3861DV的Datasheet PDF文件第4页浏览型号SI3861DV的Datasheet PDF文件第5页浏览型号SI3861DV的Datasheet PDF文件第6页 
Si3861DV  
Vishay Siliconix  
New Product  
Load Switch with Level-Shift  
PRODUCT SUMMARY  
VDS2 (V)  
rDS(on) (W)  
ID (A)  
0.105 @ V = 10 V  
"2.3  
"1.9  
"1.7  
IN  
0.150 @ V = 5.0 V  
IN  
4.5 to 20  
0.175 @ V = 4.5 V  
IN  
4.5ĆV Rated  
FEATURES  
D 105-mW Low rDS(on) TrenchFETt  
D 4.5 to 20-V Input  
D Low Profile, Small Footprint TSOP-6 Package  
D 3000-V ESD Protection On Input Switch, VON/OFF  
D Adjustable Slew-Rate  
D 1.5 to 8 -V Logic Level Control  
DESCRIPTION  
The Si3861DV includes a p- and n-channel MOSFET in a  
single TSORP-6 package. The low on-resistance p-channel  
TrenchFET is tailored for use as a load switch. The  
n-channel, with an external resistor, can be used as a  
level-shift to drive the p-channel load-switch. The n-channel  
MOSFET has internal ESD protection and can be driven by  
logic signals as low as 1.5-V. The Si3861DV operates on  
supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.  
APPLICATION CIRCUITS  
Switching Variation  
Si3861DV  
R2 @ V = 5 V, R1 = 20 kW  
IN  
20  
16  
12  
8
2, 3  
t
4
f
V
OUT  
V
IN  
Q2  
I
V
= 1 A  
ON/OFF  
L
R1  
C1  
= 3 V  
C = 10 mF  
C
i
6
5
6
= 1 mF  
o
t
d(off)  
ON/OFF  
LOAD  
C
o
t
r
Q1  
4
t
d(on)  
C
i
1
0
0
2
4
6
8
10  
R2  
R2 (kW)  
GND  
R2  
Note: For R2 switching variations with other V /R1  
IN  
combinations See Typical Characteristics  
The Si3861DV is ideally suited for high-side load switching in  
portable applications. The integrated n-channel level-shift  
device saves space by reducing external components. The  
slew rate is set externally so that rise-times can be tailored to  
different load types.  
COMPONENTS  
R1  
R2  
C1  
Pull-Up Resistor  
Typical 10 kW to 1 mW*  
Typical 0 to 100 kW*  
Typical 1000 pF  
Optional Slew-Rate Control  
Optional Slew-Rate Control  
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.  
Document Number: 70861  
S-60513—Rev. A, 05-Apr-99  
www.vishay.com S FaxBack 408-970-5600  
2-1  
123456

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