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SI3863DV-T1 PDF预览

SI3863DV-T1

更新时间： 2024-09-15 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 驱动光电二极管接口集成电路
页数 文件大小 规格书
6页 67K
描述
Buffer/Inverter Based Peripheral Driver, 5A, PDSO6, TSOP-6

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SI3863DV-T1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：TSOP,
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.44内置保护：TRANSIENT
接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码：R-PDSO-G6
JESD-609代码：e0长度：3.05 mm
功能数量：1端子数量：6
输出电流流向：SOURCE标称输出峰值电流：5 A
封装主体材料：PLASTIC/EPOXY封装代码：TSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）：240认证状态：Not Qualified
座面最大高度：1.1 mm表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子节距：1 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30宽度：1.65 mm
Base Number Matches：1

SI3863DV-T1 数据手册

 浏览型号SI3863DV-T1的Datasheet PDF文件第2页浏览型号SI3863DV-T1的Datasheet PDF文件第3页浏览型号SI3863DV-T1的Datasheet PDF文件第4页浏览型号SI3863DV-T1的Datasheet PDF文件第5页浏览型号SI3863DV-T1的Datasheet PDF文件第6页 
Si3863DV  
Vishay Siliconix  
New Product  
Load Switch with Level-Shift  
PRODUCT SUMMARY  
VDS2 (V)  
rDS(on) (W)  
ID (A)  
0.105 @ V = 4.5 V  
"2.5  
"2.1  
"1.8  
IN  
0.125 @ V = 3.0 V  
IN  
2.5 to 12  
0.165 @ V = 2.5 V  
IN  
2.5ĆV Rated  
FEATURES  
D 105-mW Low rDS(on) TrenchFETt  
D 2.5 to 12-V Input  
D Low Profile, Small Footprint TSOP-6 Package  
D 3000-V ESD Protection On Input Switch, VON/OFF  
D Adjustable Slew-Rate  
D 1.5 to 8-V Logic Level Control  
DESCRIPTION  
The Si3863DV includes a p- and n-channel MOSFET in a  
single TSORP-6 package. The low on-resistance p-channel  
TrenchFET is tailored for use as a load switch. The  
n-channel, with an external resistor, can be used as a  
level-shift to drive the p-channel load-switch. The n-channel  
MOSFET has internal ESD protection and can be driven by  
logic signals as low as 1.5-V. The Si3863DV operates on  
supply lines from 2.5 to 12-V, and can drive loads up to 2.5 A.  
APPLICATION CIRCUITS  
Switching Variation  
R2 @ V = 3 V, R1 = 20 kW  
IN  
Si3863DV  
25  
20  
15  
10  
5
I
V
= 1 A  
ON/OFF  
L
= 3 V  
2, 3  
4
C = 10 mF  
i
V
OUT  
V
IN  
C
o
= 1 mF  
t
f
Q2  
R1  
C1  
6
5
6
t
d(off)  
ON/OFF  
t
r
t
LOAD  
d(on)  
C
o
Q1  
C
i
0
1
0
2
4
6
8
R2  
R2 (kW)  
GND  
R2  
Note: For R2 switching variations with other V /R1  
IN  
combinations See Typical Characteristics  
The Si3863DV is ideally suited for high-side load switching in  
portable applications. The integrated n-channel level-shift  
device saves space by reducing external components. The  
slew rate is set externally so that rise-times can be tailored to  
different load types.  
COMPONENTS  
R1  
R2  
C1  
Pull-Up Resistor  
Typical 10 kW to 1 mW*  
Typical 0 to 100 kW*  
Typical 1000 pF  
Optional Slew-Rate Control  
Optional Slew-Rate Control  
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.  
Document Number: 70866  
S-60514—Rev. A, 5-Apr-99  
www.vishay.com S FaxBack 408-970-5600  
2-1  
123456

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