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SI3865DDV

更新时间： 2024-11-25 20:49:35
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
10页 230K
描述
Analog Circuit, 1 Func, PDSO6, TSOP-6

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SI3865DDV 技术参数

生命周期：Active包装说明：TSOP,
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.57模拟集成电路 - 其他类型：ANALOG CIRCUIT
JESD-30 代码：R-PDSO-G6长度：3.05 mm
功能数量：1端子数量：6
封装主体材料：PLASTIC/EPOXY封装代码：TSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
座面最大高度：1.1 mm最大供电电压 (Vsup)：12 V
最小供电电压 (Vsup)：1.5 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
宽度：1.65 mmBase Number Matches：1

SI3865DDV 数据手册

 浏览型号SI3865DDV的Datasheet PDF文件第2页浏览型号SI3865DDV的Datasheet PDF文件第3页浏览型号SI3865DDV的Datasheet PDF文件第4页浏览型号SI3865DDV的Datasheet PDF文件第5页浏览型号SI3865DDV的Datasheet PDF文件第6页浏览型号SI3865DDV的Datasheet PDF文件第7页 
Si3865DDV  
Vishay Siliconix  
www.vishay.com  
Load Switch with Level-Shift  
FEATURES  
• Low RDS(on) TrenchFET®: 1.5 V rated  
PRODUCT SUMMARY  
VIN (VDS2) (V)  
RDS(on) (Ω)  
ID (A)  
3.9  
• 1.5 V to 12 V input  
0.054 at VIN = 4.5 V  
0.077 at VIN = 2.5 V  
0.106 at VIN = 1.8 V  
0.165 at VIN = 1.5 V  
• 1.8 V to 8 V logic level control  
3.2  
1.5 to 12  
• Low profile, small footprint TSOP-6 package  
• 2100 V ESD protection on input switch, VON/OFF  
• Adjustable slew-rate  
2.8  
2.2  
DESCRIPTION  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
The Si3865DDV includes a p- and n-channel MOSFET in a  
single TSOP-6 package. The low on-resistance p-channel  
TrenchFET is tailored for use as a load switch. The  
n-channel, with an external resistor, can be used as a  
level-shift to drive the p-channel load-switch. The n-channel  
MOSFET has internal ESD protection and can be driven  
by logic signals as low as 1.8 V. The Si3865DDV operates  
on supply lines from 1.5 V to 12 V, and can drive loads up  
to 2.8 A.  
APPLICATIONS  
• Load switch with level-shift gate drive  
• Slew-rate control  
• Portable / consumer devices  
APPLICATION CIRCUITS  
2, 3  
28  
4
V
OUT  
V
IN  
tf  
Q2  
R1  
C1  
6
5
6
21  
td(off)  
14  
ON/OFF  
IL = 1 A  
VON/OFF = 3 V  
Ci = 10 μF  
LOAD  
C
o
Q1  
tr  
Co = 1 μF  
7
C
i
td(on)  
1
R2  
0
GND  
0
2
4
6
8
10  
R2  
R2 (kΩ)  
Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ  
The Si3865DDV is ideally suited for high-side load switching  
in portable applications. The integrated n-channel level-shift  
device saves space by reducing external components. The  
slew rate is set externally so that rise-times can be tailored  
to different load types.  
COMPONENTS  
R1  
Pull-Up Resistor  
Typical 10 kΩ to 1 MΩ a  
Typical 0 to 100 kΩ a  
Typical 1000 pF  
R2 Optional Slew-Rate Control  
C1 Optional Slew-Rate Control  
Note  
a. Minimum R1 value should be at least 10 x R2 to ensure Q1  
turn-on.  
S14-1845-Rev. D, 08-Sep-14  
Document Number: 67998  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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