Datasheet > SI3900DV_08

SI3900DV_08

更新时间： 2024-11-21 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	92K
描述
Dual N-Channel 20-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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SI3900DV_08 数据手册

Si3900DV

Vishay Siliconix

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

Pb-free Available

0.125 @ V = 4.5 V

2.4

1.8

0.200 @ V = 2.5 V

TSOP-6

Top View

3 mm

2.85 mm

N-Channel MOSFET

Ordering Information: Si3900DV-T1

Si3900DV-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

ꢀ

= 25_C

= 85_C

2.4

1.7

2.0

1.4

Continuous Drain Current (T = 150_C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

1.05

1.15

0.59

0.75

0.83

0.53

= 25_C

= 85_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

ꢁ

5 sec

130

110

150

Maximum Junction-to-Ambient

thJA

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71178

S-50329—Rev. C, 28-Feb-05

www.vishay.com

12 3 4 5

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