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SI3900DV-T1-GE3 PDF预览

SI3900DV-T1-GE3

更新时间: 2024-11-06 09:26:07
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管光电二极管
页数 文件大小 规格书
9页 201K
描述
Dual N-Channel 20-V (D-S) MOSFET

SI3900DV-T1-GE3 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.12
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):2 A
最大漏源导通电阻:0.125 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
Base Number Matches:1

SI3900DV-T1-GE3 数据手册

 浏览型号SI3900DV-T1-GE3的Datasheet PDF文件第2页浏览型号SI3900DV-T1-GE3的Datasheet PDF文件第3页浏览型号SI3900DV-T1-GE3的Datasheet PDF文件第4页浏览型号SI3900DV-T1-GE3的Datasheet PDF文件第5页浏览型号SI3900DV-T1-GE3的Datasheet PDF文件第6页浏览型号SI3900DV-T1-GE3的Datasheet PDF文件第7页 
Si3900DV  
Vishay Siliconix  
Dual N-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
2.4  
Definition  
0.125 at VGS = 4.5 V  
0.200 at VGS = 2.5 V  
TrenchFET® Power MOSFET  
Compliant to RoHS Directive 2002/95/EC  
20  
1.8  
TSOP-6  
Top View  
G1  
S2  
G2  
D1  
S1  
D2  
1
2
3
6
5
D
1
D
2
3 mm  
4
G
G
2
1
2.85 mm  
S
S
2
1
Ordering Information: Si3900DV-T1-E3 (Lead (Pb)-free)  
Si3900DV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
20  
8
V
VGS  
12  
TA = 25 °C  
A = 85 °C  
2.4  
1.7  
2.0  
1.4  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
A
IDM  
IS  
Pulsed Drain Current (10 µs Pulse Width)  
Continuous Source Current (Diode Conduction)a  
1.05  
1.15  
0.59  
0.75  
0.83  
0.53  
TA = 25 °C  
TA = 85 °C  
Maximum Power Dissipationa  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
93  
Maximum  
110  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
130  
75  
150  
°C/W  
RthJF  
90  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71178  
S09-2275-Rev. D, 02-Nov-09  
www.vishay.com  
1

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