是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 最大漏极电流 (Abs) (ID): | 2.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高工作温度: | 150 °C |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.15 W | 子类别: | Other Transistors |
表面贴装: | YES | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3909DV | VISHAY |
获取价格 |
Dual P-Channel 20-V (D-S) MOSFET | |
SI3909DV-E3 | VISHAY |
获取价格 |
TRANSISTOR 1800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET Gene | |
SI3909DV-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
SI3909DV-T1-GE3 | VISHAY |
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Small Signal Field-Effect Transistor, 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semi | |
SI390M100 | NTE |
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SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI390M16 | NTE |
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SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI390M160 | NTE |
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SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI390M200 | NTE |
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SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI390M25 | NTE |
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SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI390M250 | NTE |
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SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |