生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 2.12 | Is Samacsys: | N |
电容: | 3900 µF | 电容器类型: | ALUMINUM ELECTROLYTIC CAPACITOR |
自定义功能: | Consult Factory | 介电材料: | ALUMINUM (WET) |
负容差: | 20% | 端子数量: | 2 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装形式: | Radial | 极性: | POLARIZED |
正容差: | 20% | 额定(直流)电压(URdc): | 80 V |
端子节距: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3905DV | VISHAY |
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Dual P-Channel 8-V (D-S) MOSFET | |
SI3905DV-E3 | VISHAY |
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Transistor | |
SI3905DV-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 2.5A I(D), 8V, 2-Element, P-Channel, Silicon, Metal- | |
SI3905DV-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, | |
SI3909DV | VISHAY |
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Dual P-Channel 20-V (D-S) MOSFET | |
SI3909DV-E3 | VISHAY |
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TRANSISTOR 1800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET Gene | |
SI3909DV-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
SI3909DV-T1-GE3 | VISHAY |
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Small Signal Field-Effect Transistor, 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semi | |
SI390M100 | NTE |
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SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
SI390M16 | NTE |
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SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |