SI3867DV-T1

更新时间： 2024-09-15 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
6页	101K
描述
P-Channel 20-V (D-S) MOSFET

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技术参数
数据手册

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SI3867DV-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.91	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	3.9 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI3867DV-T1 数据手册

Si3867DV

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

- 5.1

- 4.5

- 3.7

•

PWM Optimized

Pb-free

0.051 at V_GS= - 4.5 V

0.067 at V_GS= - 3.3 V

0.100 at V_GS= - 2.5 V

Available

RoHS*

- 20

APPLICATIONS

COMPLIANT

•

DC/DC

- HDD

- Power Supplies

•

Portable Devices Such As Cell Phones, PDA,

DSC, and DVC

TSOP-6

Top View

(4) S

3 mm

(3) G

2.85 mm

(1, 2, 5, 6) D

Ordering Information: Si3867DV-T1

Si3867DV-T1-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 sec

Steady State

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 85 °C

- 5.1

- 3.7

- 3.9

- 2.8

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

- 20

Continuous Diode Current (Diode Conduction)^a

- 1.7

2.0

- 0.9

1.1

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 85 °C

1.0

0.6

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

62.5

Unit

t ≤ 5 sec

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

110

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72068

S-60422-Rev. C, 20-Mar-06

www.vishay.com

12 3 4 5 6

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