5秒后页面跳转
SI3867DV-T1-E3 PDF预览

SI3867DV-T1-E3

更新时间: 2024-11-21 06:11:35
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 101K
描述
P-Channel 20-V (D-S) MOSFET

SI3867DV-T1-E3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:TSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.43
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:990482Samacsys Pin Count:6
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:6-LEAD TSOPSamacsys Released Date:2020-03-18 03:11:03
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):3.9 A
最大漏极电流 (ID):3.9 A最大漏源导通电阻:0.051 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI3867DV-T1-E3 数据手册

 浏览型号SI3867DV-T1-E3的Datasheet PDF文件第2页浏览型号SI3867DV-T1-E3的Datasheet PDF文件第3页浏览型号SI3867DV-T1-E3的Datasheet PDF文件第4页浏览型号SI3867DV-T1-E3的Datasheet PDF文件第5页浏览型号SI3867DV-T1-E3的Datasheet PDF文件第6页 
Si3867DV  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
rDS(on) (Ω)  
ID (A)  
- 5.1  
- 4.5  
- 3.7  
PWM Optimized  
Pb-free  
0.051 at VGS = - 4.5 V  
0.067 at VGS = - 3.3 V  
0.100 at VGS = - 2.5 V  
Available  
RoHS*  
- 20  
APPLICATIONS  
COMPLIANT  
DC/DC  
- HDD  
- Power Supplies  
Portable Devices Such As Cell Phones, PDA,  
DSC, and DVC  
TSOP-6  
Top View  
(4) S  
1
2
3
6
5
3 mm  
(3) G  
4
2.85 mm  
(1, 2, 5, 6) D  
Ordering Information: Si3867DV-T1  
Si3867DV-T1-E3 (Lead (Pb)-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 sec  
Steady State  
- 20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
12  
TA = 25 °C  
TA = 85 °C  
- 5.1  
- 3.7  
- 3.9  
- 2.8  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 20  
Continuous Diode Current (Diode Conduction)a  
- 1.7  
2.0  
- 0.9  
1.1  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 85 °C  
1.0  
0.6  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
45  
Maximum  
62.5  
Unit  
t 5 sec  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
90  
110  
°C/W  
RthJF  
25  
30  
Notes:  
a. Surface Mounted on 1" x 1" FR4 Board.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 72068  
S-60422-Rev. C, 20-Mar-06  
www.vishay.com  
1

SI3867DV-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI3443CDV-T1-GE3 VISHAY

功能相似

TRANSISTOR 5970 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL

与SI3867DV-T1-E3相关器件

型号 品牌 获取价格 描述 数据表
SI3872DV VISHAY

获取价格

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel,
SI3872DV-T1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel,
SI3872DV-T1-E3 VISHAY

获取价格

TRANSISTOR 2500 mA, 30 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSOP-6, FE
SI3879DV VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET with Schottky Diode
SI3879DV-T1-E3 VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET with Schottky Diode
SI3879DV-T1-GE3 VISHAY

获取价格

Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
SI-38-DC ETC

获取价格

Dual independent 1080p playback
SI-38M ETC

获取价格

Dual independent 1080p playback
SI-38N ETC

获取价格

AMD Radeon™ HD 7600G/7500G GPU
SI-38N-26 ETC

获取价格

AMD Radeon™ HD 7600G/7500G GPU