Datasheet > SI3879DV

SI3879DV

更新时间： 2024-09-15 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
10页	137K
描述
P-Channel 20-V (D-S) MOSFET with Schottky Diode

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SI3879DV 数据手册

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Si3879DV

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET with Schottky Diode

FEATURES

•

PRODUCT SUMMARY

LITTLE FOOT^®Plus Schottky Power MOSFET

I_D(A)^a

- 5.0

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

0.070 at V_GS= - 5.0 V

0.105 at V_GS= - 2.5 V

- 20

4.5 nC

APPLICATIONS

RoHS

- 4.2

COMPLIANT

•

HDD

- DC-DC Converter

Asynchronous Rectification

SCHOTTKY PRODUCT SUMMARY

•

V_f(V)

I_F(A)^a

V_KA(V)

Diode Forward Voltage

0.45 at 1 A

TSOP-6

Top View

D/K

3 mm

Marking Code

IG XXX

D/K

Lot Traceability

and Date Code

Part # Code

2.85 mm

Ordering Information: Si3879DV-T1-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

- 20

V_KA

V_GS

T_C= 25 °C

- 5.0

_C= 70 °C

_A= 25 °C

- 4.0

Continuous Drain Current (T_J= 150 °C) (MOSFET)

I_D

- 4.0^{b, c}

- 3.0^{b, c}

- 20

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (MOSFET)

_C= 25 °C

_A= 25 °C

- 2.7

Continuous Source-Drain Diode Current

(MOSFET Diode Conduction)

- 1.6^{b, c}

2^b

I_F

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

I_FM

T_C= 25 °C

_C= 70 °C

3.3

2.1

Maximum Power Dissipation (MOSFET)

2.0^{b, c}

1.2^{b, c}

1.9

T_A= 25 °C

T_A= 70 °C

T_C= 25 °C

P_D

_C= 70 °C

_A= 25 °C

1.2

Maximum Power Dissipation (Schottky)

1.3^{b, c}

0.9^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

Document Number: 74958

S-71290–Rev. A, 02-Jul-07

www.vishay.com

12 3 4 5 6 7...10

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