Datasheet > SI3872DV-T1

SI3872DV-T1

更新时间： 2024-09-16 05:42:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	87K
描述
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6

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SI3872DV-T1 数据手册

_C/W

Si3872DV

Vishay Siliconix

New Product

N-Channel 30-V and P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.105 @ V = 10 V

"2.5

"2.0

"1.8

"1.3

N-Channel

P-Channel

0.175 @ V = 4.5 V

0.200 @ V = –4.5 V

–20

0.340 @ V = –2.5 V

TSOP-6

Top View

3 mm

2.85 mm

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

"12

"1.8

"1.2

"20

"2.5

"2.0

= 25_C

= 70_C

a, b

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

a, b

Continuous Source Current (Diode Conduction)

1.05

–1.05

= 25_C

= 70_C

1.15

0.73

a, b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

110

150

Maximum Junction-to-Ambient

thJA

Maximum Junction-to-Lead

thJL

Notes

a. Surface Mounted on FR4 Board.

b. t v 5 sec

Document Number: 70970

S-99340—Rev. B, 22-Nov-99

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4 5 6 7 8

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