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SI3865DV-T1-E3 PDF预览

SI3865DV-T1-E3

更新时间: 2024-11-25 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 驱动光电二极管接口集成电路
页数 文件大小 规格书
6页 87K
描述
Buffer/Inverter Based Peripheral Driver, 6A, PDSO6, LEAD FREE, LOW PROFILE, TSOP-6

SI3865DV-T1-E3 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSSOP,针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.66
Is Samacsys:N内置保护:TRANSIENT
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G6
长度:3.05 mm功能数量:1
端子数量:6输出电流流向:SOURCE
标称输出峰值电流:6 A封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH认证状态:Not Qualified
座面最大高度:1.1 mm表面贴装:YES
端子形式:GULL WING端子节距:1 mm
端子位置:DUAL宽度:1.65 mm
Base Number Matches:1

SI3865DV-T1-E3 数据手册

 浏览型号SI3865DV-T1-E3的Datasheet PDF文件第2页浏览型号SI3865DV-T1-E3的Datasheet PDF文件第3页浏览型号SI3865DV-T1-E3的Datasheet PDF文件第4页浏览型号SI3865DV-T1-E3的Datasheet PDF文件第5页浏览型号SI3865DV-T1-E3的Datasheet PDF文件第6页 
Si3865DV  
Vishay Siliconix  
New Product  
Load Switch with Level-Shift  
PRODUCT SUMMARY  
VDS2 (V)  
rDS(on) (W)  
ID (A)  
0.080 @ V = 4.5 V  
"2.7  
"2.2  
"1.7  
IN  
0.110 @ V = 2.5 V  
IN  
1.8 to 8  
0.175 @ V = 1.8 V  
IN  
1.8ĆV Rated  
FEATURES  
D 80-mW Low rDS(on) TrenchFETt  
D 1.8 to 8-V Input  
D Low Profile, Small Footprint TSOP-6 Package  
D 3000-V ESD Protection On Input Switch, VON/OFF  
D Adjustable Slew-Rate  
D 1.5 to 8-V Logic Level Control  
DESCRIPTION  
The Si3865DV includes a p- and n-channel MOSFET in a  
single TSORP-6 package. The low on-resistance p-channel  
TrenchFET is tailored for use as a load switch. The  
n-channel, with an external resistor, can be used as a  
level-shift to drive the p-channel load-switch. The n-channel  
MOSFET has internal ESD protection and can be driven by  
logic signals as low as 1.5-V. The Si3865DV operates on  
supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A.  
APPLICATION CIRCUITS  
Switching Variation  
R2 @ V = 2.5 V, R1 = 20 kW  
Si3865DV  
IN  
40  
I
V
= 1 A  
ON/OFF  
L
2, 3  
= 3 V  
4
V
C = 10 mF  
32  
24  
16  
8
OUT  
i
V
IN  
C
o
= 1 mF  
Q2  
t
d(off)  
R1  
C1  
t
f
6
5
6
ON/OFF  
LOAD  
C
o
t
r
t
d(on)  
Q1  
C
i
0
1
0
2
4
6
8
R2  
R2 (kW)  
GND  
R2  
Note: For R2 switching variations with other V /R1  
IN  
combinations See Typical Characteristics  
The Si3865DV is ideally suited for high-side load switching in  
portable applications. The integrated n-channel level-shift  
device saves space by reducing external components. The  
slew rate is set externally so that rise-times can be tailored to  
different load types.  
COMPONENTS  
R1  
R2  
C1  
Pull-Up Resistor  
Typical 10 kW to 1 mW*  
Typical 0 to 100 kW*  
Typical 1000 pF  
Optional Slew-Rate Control  
Optional Slew-Rate Control  
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.  
Document Number: 70867  
S-60515—Rev. A, 05-Apr-99  
www.vishay.com S FaxBack 408-970-5600  
2-1  

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