Datasheet > SI3865BDV_10

SI3865BDV_10

更新时间： 2024-11-21 12:22:59

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
10页	207K
描述
Load Switch with Level-Shift

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SI3865BDV_10 数据手册

Si3865BDV

Vishay Siliconix

Load Switch with Level-Shift

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS2(V)

R_DS(on)()

I_D(A)

2.9

Definition

0.060 at V_IN= 4.5 V

0.100 at V_IN= 2.5 V

0.175 at V_IN= 1.8 V

•

60 m Low R_DS(on)TrenchFET^®: 1.8 V Rated

1.8 V to 8 V Input

1.5 V to 8 V Logic Level Control

Low Profile, Small Footprint TSOP-6 Package

3000 V ESD Protection On Input Switch, V_ON/OFF

Adjustable Slew-Rate

1.8 to 8

2.2

1.7

DESCRIPTION

The Si3865BDV includes a p- and n-channel MOSFET in a

single TSOP-6 package. The low on-resistance p-channel

TrenchFET^®is tailored for use as a load switch. The

n-channel, with an external resistor, can be used as a level-

shift to drive the p-channel load-switch. The n-channel

MOSFET has internal ESD protection and can be driven by

logic signals as low as 1.5 V. The Si3865BDV operates on

supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A.

Compliant to RoHS Directive 2002/95/EC

APPLICATION CIRCUITS

Si3865BDV

= 1 A

ON/OFF

= 3 V

2, 3

C = 10 µF

OUT

= 1 µF

d(off)

ON/OFF

LOAD

d(on)

R2 (k)

GND

Note: For R2 switching variations with other V /R1

combinations See Typical Characteristics

Switching Variation

R2 at V_IN= 2.5 V, R1 = 20 k

The Si3865BDV is ideally suited for high-side load switching

in portable applications. The integrated N-Channel level-shift

device saves space by reducing external components. The

slew rate is set externally so that rise-times can be tailored to

different load types.

COMPONENTS

Pull-Up Resistor

Typical 10 k to 1 M*

Typical 0 to 100 k*

Typical 1000 pF

Optional Slew-Rate Control

* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.

Document Number: 72848

S10-2142-Rev. D, 20-Sep-10

www.vishay.com

12 3 4 5 6 7...10

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