Datasheet > SI3861DV-T1

SI3861DV-T1

更新时间： 2024-11-25 19:55:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	74K
描述
Peripheral Driver,

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技术参数
数据手册

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SI3861DV-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.86
Base Number Matches：	1

SI3861DV-T1 数据手册

Si3861DV

Vishay Siliconix

New Product

Load Switch with Level-Shift

PRODUCT SUMMARY

V_DS2(V)

r_DS(on)(W)

I_D(A)

0.105 @ V = 10 V

"2.3

"1.9

"1.7

0.150 @ V = 5.0 V

4.5 to 20

0.175 @ V = 4.5 V

4.5ĆV Rated

FEATURES

D 105-mW Low r_DS(on)TrenchFETt

D ^{4.5 to 20}-V Input

D Low Profile, Small Footprint TSOP-6 Package

D 3000-V ESD Protection On Input Switch, V_ON/OFF

D Adjustable Slew-Rate

D ^{1.5 to 8}-V Logic Level Control

DESCRIPTION

The Si3861DV includes a p- and n-channel MOSFET in a

single TSO_RP-6 package. The low on-resistance p-channel

TrenchFET is tailored for use as a load switch. The

n-channel, with an external resistor, can be used as a

level-shift to drive the p-channel load-switch. The n-channel

MOSFET has internal ESD protection and can be driven by

logic signals as low as 1.5-V. The Si3861DV operates on

supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.

APPLICATION CIRCUITS

Switching Variation

Si3861DV

R2 @ V = 5 V, R1 = 20 kW

2, 3

OUT

= 1 A

ON/OFF

= 3 V

C = 10 mF

= 1 mF

d(off)

ON/OFF

LOAD

d(on)

R2 (kW)

GND

Note: For R2 switching variations with other V /R1

combinations See Typical Characteristics

The Si3861DV is ideally suited for high-side load switching in

portable applications. The integrated n-channel level-shift

device saves space by reducing external components. The

slew rate is set externally so that rise-times can be tailored to

different load types.

COMPONENTS

Pull-Up Resistor

Typical 10 kW to 1 mW*

Typical 0 to 100 kW*

Typical 1000 pF

Optional Slew-Rate Control

*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.

Document Number: 70861

S-60513—Rev. A, 05-Apr-99

www.vishay.com S FaxBack 408-970-5600

2-1

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